NTMFD4901NFT1G

Specifications

Vgsth Max Id

2.2V @ 250μA

Drain To Source Voltage Vdss

30V

Transistor Element Material

SILICON

ECCN Kodu

EAR99

Drainsource On Resistancemax

0.01Ohm

Gate To Source Voltage Vgs

20V

RoHS Durumu

ROHS3 Compliant

Pulsed Drain Currentmax Idm

60A

Terminal Formu

FLAT

Fet Feature

Logic Level Gate

JESD-609 Kodu

e3

Case Connection

DRAIN SOURCE

Ambalaj

Tape & Reel (TR)

Terminal Sayısı

8

Ds Breakdown Voltagemin

30V

Transistor Application

SWITCHING

Çalışma Sıcaklığı

-55°C~150°C TJ

Operating Mode

ENHANCEMENT MODE

Fabrika Tedarik Süresi

9 Weeks

Yüzey Montaj

YES

Element Configuration

Dual

Pin Sayısı

8

Gate Charge Qg Max Vgs

9.7nC @ 4.5V

Radyasyon Dayanımı

No

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Current Continuous Drain Id25

10.3A 17.9A

Max Power Dissipation

1.2W

Rds On Max Id Vgs

6.5m Ω @ 10A, 10V

Input Capacitance Ciss Max Vds

1150pF @ 15V

Kılıf / Paket

8-PowerTDFN

Montaj Tipi

Surface Mount

Kurşunsuz

Lead Free

Terminal Kaplaması

Tin (Sn)

Power Max

1.1W 1.2W

Nem Hassasiyeti (MSL)

1 (Unlimited)

Lifecycle Status

ACTIVE (Last Updated: 1 day ago)

Kurşunsuz Kodu

yes

Continuous Drain Current Id

17.9A

Parça Durumu

Active

Number Of Elements

2