Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Yükseklik
- 1.5mm
- Transistor Application
- SWITCHING
- Element Configuration
- Dual
- Yüzey Montaj
- YES
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Operating Mode
- ENHANCEMENT MODE
- Direnç
- 33mOhm
- Uzunluk
- 5mm
- Current Continuous Drain Id25
- 4.8A
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Contact Plating
- Tin
- Gate Charge Qg Max Vgs
- 35nC @ 4.5V
- Rds On Max Id Vgs
- 33m Ω @ 6.2A, 4.5V
- Gate To Source Voltage Vgs
- 12V
- ECCN Kodu
- EAR99
- Drain To Source Voltage Vdss
- 20V
- Transistor Element Material
- SILICON
- Additional Feature
- LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
- JESD-609 Kodu
- e3
- Number Of Elements
- 2
- Max Output Current
- 6A
- Drain To Source Breakdown Voltage
- -20V
- Power Dissipation
- 2W
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- Montaj Tipi
- Surface Mount
- Terminal Sayısı
- 8
- Tepe Reflow Sıcaklığı (°C)
- 260
- Fabrika Tedarik Süresi
- 29 Weeks
- Radyasyon Dayanımı
- No
- Pin Sayısı
- 8
- Max Power Dissipation
- 750mW
- Rise Time
- 20ns
- Vgsth Max Id
- 1.2V @ 250μA
- Fet Feature
- Logic Level Gate
- Terminal Formu
- GULL WING
- RoHS Durumu
- ROHS3 Compliant
- Akım Değeri
- -6A
- Tepe Reflow Süresi (maks. sn)
- 40
- Ambalaj
- Tape & Reel (TR)
- Fall Time Typ
- 50 ns
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