Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Current Continuous Drain Id25
- 9A 5.7A
- Radyasyon Dayanımı
- No
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Pin Sayısı
- 8
- Gate Charge Qg Max Vgs
- 50nC @ 10V
- Uzunluk
- 5mm
- Rise Time
- 22ns
- Max Power Dissipation
- 1.5W
- Rds On Max Id Vgs
- 12m Ω @ 10A, 10V
- Terminal Sayısı
- 8
- Yükseklik
- 1.5mm
- Operating Mode
- ENHANCEMENT MODE
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Element Configuration
- Dual
- Yüzey Montaj
- YES
- JESD-609 Kodu
- e3
- Genişlik
- 4mm
- Ambalaj
- Tape & Reel (TR)
- Fall Time Typ
- 8.5 ns
- Transistor Element Material
- SILICON
- Vgsth Max Id
- 3V @ 250μA
- Gate To Source Voltage Vgs
- 20V
- ECCN Kodu
- EAR99
- RoHS Durumu
- RoHS Compliant
- Fet Feature
- Logic Level Gate
- Terminal Formu
- GULL WING
- Turn Off Delay Time
- 26 ns
- Drain To Source Breakdown Voltage
- 40V
- Fet Type
- 2 N-Channel (Dual)
- Temel Parça No
- NTMD5836
- Number Of Elements
- 2
- Drain Currentmax Abs Id
- 9A
- Pin Sayısı
- 8
- Yayın Yılı
- 2011
- Lifecycle Status
- OBSOLETE (Last Updated: 1 week ago)
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Continuous Drain Current Id
- 5.7A
- Parça Durumu
- Obsolete
- Kurşunsuz Kodu
- yes
- Power Dissipation
- 1.5W
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