Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Transistor Application
- SWITCHING
- Yükseklik
- 1.5mm
- Yüzey Montaj
- YES
- Element Configuration
- Dual
- Operating Mode
- ENHANCEMENT MODE
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Uzunluk
- 5mm
- Direnç
- 48MOhm
- Contact Plating
- Tin
- Gate Charge Qg Max Vgs
- 16nC @ 10V
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Rds On Max Id Vgs
- 60m Ω @ 4A, 10V
- ECCN Kodu
- EAR99
- Gate To Source Voltage Vgs
- 20V
- Transistor Element Material
- SILICON
- JESD-609 Kodu
- e3
- Number Of Elements
- 2
- Drain To Source Breakdown Voltage
- 30V
- Turn On Delay Time
- 7 ns
- Power Dissipation
- 2W
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- Montaj Tipi
- Surface Mount
- Terminal Sayısı
- 8
- Tepe Reflow Sıcaklığı (°C)
- 260
- Fabrika Tedarik Süresi
- 36 Weeks
- Pin Sayısı
- 8
- Radyasyon Dayanımı
- No
- Rise Time
- 14ns
- Max Power Dissipation
- 2W
- Vgsth Max Id
- 3V @ 250μA
- Terminal Formu
- GULL WING
- Fet Feature
- Logic Level Gate
- Tepe Reflow Süresi (maks. sn)
- 40
- RoHS Durumu
- ROHS3 Compliant
- Akım Değeri
- 4A
- Fall Time Typ
- 10 ns
- Ambalaj
- Tape & Reel (TR)
- Genişlik
- 4mm
- Yayın Yılı
- 2006
- Pin Sayısı
- 8
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