Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Transistor Application
- SWITCHING
- Yükseklik
- 1.5mm
- Operating Mode
- ENHANCEMENT MODE
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Yüzey Montaj
- YES
- Element Configuration
- Dual
- Contact Plating
- Tin
- Gate Charge Qg Max Vgs
- 7.7nC @ 4.5V
- Current Continuous Drain Id25
- 4.9A
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Uzunluk
- 5mm
- Rds On Max Id Vgs
- 20m Ω @ 7.5A, 10V
- Transistor Element Material
- SILICON
- ECCN Kodu
- EAR99
- Gate To Source Voltage Vgs
- 20V
- JESD-609 Kodu
- e3
- Number Of Elements
- 1
- Drain To Source Breakdown Voltage
- 30V
- Turn On Delay Time
- 9.4 ns
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- Power Dissipation
- 1.28W
- Montaj Tipi
- Surface Mount
- Power Max
- 750mW
- Terminal Sayısı
- 8
- Fabrika Tedarik Süresi
- 2 Weeks
- Pin Sayısı
- 8
- Radyasyon Dayanımı
- No
- Rise Time
- 4ns
- Max Power Dissipation
- 1.29W
- Vgsth Max Id
- 3V @ 250μA
- Drainsource On Resistancemax
- 0.02Ohm
- RoHS Durumu
- ROHS3 Compliant
- Terminal Formu
- GULL WING
- Fet Feature
- Logic Level Gate
- Genişlik
- 4mm
- Fall Time Typ
- 4 ns
- Ambalaj
- Tape & Reel (TR)
- Pin Sayısı
- 8
- Yayın Yılı
- 2007
- Drain Currentmax Abs Id
- 4.9A
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