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Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Number Of Elements
- 2
- Drain To Source Breakdown Voltage
- -30V
- Turn On Delay Time
- 16 ns
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- Power Dissipation
- 2W
- Montaj Tipi
- Surface Mount
- Power Max
- 730mW
- Yükseklik
- 1.5mm
- Transistor Application
- SWITCHING
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Operating Mode
- ENHANCEMENT MODE
- Direnç
- 85MOhm
- Uzunluk
- 5mm
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Current Continuous Drain Id25
- 2.34A
- Contact Plating
- Tin
- Gate Charge Qg Max Vgs
- 25nC @ 10V
- Rds On Max Id Vgs
- 85m Ω @ 3.05A, 10V
- Nominal Vgs
- -1.7 V
- Gate To Source Voltage Vgs
- 20V
- ECCN Kodu
- EAR99
- Drain To Source Voltage Vdss
- 30V
- Transistor Element Material
- SILICON
- Additional Feature
- AVALANCHE RATED
- JESD-609 Kodu
- e3
- Reach Svhc
- No SVHC
- Pin Sayısı
- 8
- Feedback Capmax Crss
- 135 pF
- Yayın Yılı
- 2006
- Turn Off Delay Time
- 45 ns
- Temel Parça No
- NTMD3P03
- Voltage Rated Dc
- -30V
- Fet Type
- 2 P-Channel (Dual)
- Input Capacitance Ciss Max Vds
- 750pF @ 24V
- Kurşunsuz
- Lead Free
- Lifecycle Status
- ACTIVE (Last Updated: 1 day ago)
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Continuous Drain Current Id
- -3.05A
- Parça Durumu
- Active
- Kurşunsuz Kodu
- yes
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