Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Terminal Sayısı
- 8
- Tepe Reflow Sıcaklığı (°C)
- 260
- Pin Sayısı
- 8
- Max Power Dissipation
- 710mW
- Rise Time
- 35ns
- Drainsource On Resistancemax
- 0.1Ohm
- Vgsth Max Id
- 1.5V @ 250μA
- Montaj
- Surface Mount
- Fet Feature
- Logic Level Gate
- Terminal Formu
- GULL WING
- RoHS Durumu
- RoHS Compliant
- Pulsed Drain Currentmax Idm
- 9A
- Akım Değeri
- -2.3A
- Tepe Reflow Süresi (maks. sn)
- 40
- Ambalaj
- Tape & Reel (TR)
- Fall Time Typ
- 29 ns
- Yayın Yılı
- 2006
- Pin Sayısı
- 8
- Turn Off Delay Time
- 33 ns
- Voltage Rated Dc
- -16V
- Fet Type
- 2 P-Channel (Dual)
- Input Capacitance Ciss Max Vds
- 750pF @ 16V
- Terminal Kaplaması
- Tin (Sn)
- Kurşunsuz
- Lead Free
- Lifecycle Status
- OBSOLETE (Last Updated: 1 week ago)
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Continuous Drain Current Id
- -3.85A
- Parça Durumu
- Obsolete
- Kurşunsuz Kodu
- yes
- Transistor Application
- SWITCHING
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Operating Mode
- ENHANCEMENT MODE
- Current Continuous Drain Id25
- 2.3A
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Gate Charge Qg Max Vgs
- 18nC @ 4.5V
- Rds On Max Id Vgs
- 100m Ω @ 2.4A, 4.5V
- Gate To Source Voltage Vgs
- 10V
- Configuration
- SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- ECCN Kodu
- EAR99
- Transistor Element Material
- SILICON
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