NTMD2C02R2SG

Specifications

Additional Feature

LOGIC LEVEL COMPATIBLE

JESD-609 Kodu

e3

Polaritychannel Type

N-CHANNEL AND P-CHANNEL

Ambalaj

Tape & Reel (TR)

Fall Time Typ

35 ns

Transistor Element Material

SILICON

Vgsth Max Id

1.2V @ 250μA

Qualification Status

Not Qualified

Montaj

Surface Mount

Drainsource On Resistancemax

0.043Ohm

Gate To Source Voltage Vgs

12V

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

ECCN Kodu

EAR99

Akım Değeri

5.2A

Pulsed Drain Currentmax Idm

48A

RoHS Durumu

RoHS Compliant

Tepe Reflow Süresi (maks. sn)

40

Fet Feature

Logic Level Gate

Terminal Formu

GULL WING

Current Continuous Drain Id25

5.2A 3.4A

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Gate Charge Qg Max Vgs

20nC @ 4.5V

Pin Sayısı

8

Max Power Dissipation

2W

Rise Time

40ns

Rds On Max Id Vgs

43m Ω @ 4A, 4.5V

Terminal Sayısı

8

Transistor Application

SWITCHING

Jesd30 Code

R-PDSO-G8

Çalışma Sıcaklığı

-55°C~150°C TJ

Operating Mode

ENHANCEMENT MODE

Tepe Reflow Sıcaklığı (°C)

260

Nem Hassasiyeti (MSL)

1 (Unlimited)

Continuous Drain Current Id

3.4A

Parça Durumu

Obsolete

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Power Dissipation

2W

Input Capacitance Ciss Max Vds

1100pF @ 10V

Montaj Tipi

Surface Mount

Kurşunsuz

Lead Free