NTMD2C02R2

Specifications

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Current Continuous Drain Id25

5.2A 3.4A

Gate Charge Qg Max Vgs

20nC @ 4.5V

Rds On Max Id Vgs

43m Ω @ 4A, 4.5V

Jesd30 Code

R-PDSO-G8

Transistor Application

SWITCHING

Operating Mode

ENHANCEMENT MODE

Çalışma Sıcaklığı

-55°C~150°C TJ

Additional Feature

LOGIC LEVEL COMPATIBLE

JESD-609 Kodu

e0

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Gate To Source Voltage Vgs

12V

ECCN Kodu

EAR99

Transistor Element Material

SILICON

Qualification Status

Not Qualified

Drain To Source Breakdown Voltage

20V

Number Of Elements

2

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Power Dissipation

2W

Montaj Tipi

Surface Mount

Pin Sayısı

8

Max Power Dissipation

2W

Rise Time

40ns

Terminal Sayısı

8

REACH Uyumluluk Kodu

not_compliant

Tepe Reflow Sıcaklığı (°C)

240

Polaritychannel Type

N-CHANNEL AND P-CHANNEL

Ambalaj

Tape & Reel (TR)

Fall Time Typ

35 ns

Drainsource On Resistancemax

0.043Ohm

Montaj

Surface Mount

Vgsth Max Id

1.2V @ 250μA

Fet Feature

Logic Level Gate

Terminal Formu

GULL WING

Akım Değeri

2A

Pulsed Drain Currentmax Idm

48A

RoHS Durumu

Non-RoHS Compliant

Tepe Reflow Süresi (maks. sn)

30

Turn Off Delay Time

35 ns

Voltage Rated Dc

20V