Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Lifecycle Status
- ACTIVE (Last Updated: 1 day ago)
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Continuous Drain Current Id
- 1.3A
- Parça Durumu
- Active
- Kurşunsuz Kodu
- yes
- Kılıf / Paket
- 6-UFDFN Exposed Pad
- Power Dissipation
- 800mW
- Input Capacitance Ciss Max Vds
- 300pF @ 10V
- Kurşunsuz
- Lead Free
- Montaj Tipi
- Surface Mount
- Terminal Kaplaması
- Tin (Sn)
- Turn Off Delay Time
- 149 ns
- Fet Type
- 2 P-Channel (Dual)
- Turn On Delay Time
- 17.4 ns
- Number Of Elements
- 2
- Drain Currentmax Abs Id
- 1.7A
- Yayın Yılı
- 2010
- Pin Sayısı
- 6
- Case Connection
- DRAIN
- JESD-609 Kodu
- e3
- Ambalaj
- Tape & Reel (TR)
- Fall Time Typ
- 74 ns
- Transistor Element Material
- SILICON
- Drain To Source Voltage Vdss
- 20V
- Vgsth Max Id
- 1V @ 250μA
- Gate To Source Voltage Vgs
- 8V
- Drainsource On Resistancemax
- 0.2Ohm
- ECCN Kodu
- EAR99
- RoHS Durumu
- ROHS3 Compliant
- Fet Feature
- Logic Level Gate
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Radyasyon Dayanımı
- No
- Gate Charge Qg Max Vgs
- 4.2nC @ 4.5V
- Pin Sayısı
- 6
- Rise Time
- 32.3ns
- Max Power Dissipation
- 500mW
- Rds On Max Id Vgs
- 200m Ω @ 2A, 4.5V
- Ds Breakdown Voltagemin
- 20V
- Terminal Sayısı
- 6
- Transistor Application
- SWITCHING
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