Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Gate Charge Qg Max Vgs
- 3.5nC @ 4.5V
- Pin Sayısı
- 6
- Current Continuous Drain Id25
- 1.1A
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Max Power Dissipation
- 500mW
- Rise Time
- 24ns
- Rds On Max Id Vgs
- 250m Ω @ 1.5A, 4.5V
- Terminal Sayısı
- 6
- Transistor Application
- SWITCHING
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Operating Mode
- ENHANCEMENT MODE
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Element Configuration
- Dual
- REACH Uyumluluk Kodu
- unknown
- JESD-609 Kodu
- e3
- Case Connection
- DRAIN
- Fall Time Typ
- 62 ns
- Ambalaj
- Tape & Reel (TR)
- Vgsth Max Id
- 1V @ 250μA
- Montaj
- Surface Mount
- Qualification Status
- Not Qualified
- Transistor Element Material
- SILICON
- Drain To Source Voltage Vdss
- 20V
- ECCN Kodu
- EAR99
- Gate To Source Voltage Vgs
- 8V
- Drainsource On Resistancemax
- 0.25Ohm
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- RoHS Durumu
- RoHS Compliant
- Terminal Formu
- NO LEAD
- Fet Feature
- Logic Level Gate
- Turn Off Delay Time
- 68 ns
- Drain To Source Breakdown Voltage
- -20V
- Fet Type
- 2 P-Channel (Dual)
- Number Of Elements
- 2
- Yayın Yılı
- 2009
- Pin Sayısı
- 6
- Drain Currentmax Abs Id
- 1.1A
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Lifecycle Status
- LAST SHIPMENTS (Last Updated: 2 days ago)
- Kurşunsuz Kodu
- yes
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