NTLTD7900ZR2G

Specifications

Çalışma Sıcaklığı

-55°C~150°C TJ

Operating Mode

ENHANCEMENT MODE

Transistor Application

SWITCHING

Rds On Max Id Vgs

26m Ω @ 6.5A, 4.5V

Gate Charge Qg Max Vgs

18nC @ 4.5V

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Qualification Status

Not Qualified

Transistor Element Material

SILICON

ECCN Kodu

EAR99

Gate To Source Voltage Vgs

12V

Configuration

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

JESD-609 Kodu

e3

Additional Feature

ESD PROTECTED

Case Connection

DRAIN

Number Of Elements

2

Drain To Source Breakdown Voltage

20V

Montaj Tipi

Surface Mount

Kılıf / Paket

8-VDFN Exposed Pad

Power Dissipation

1.5W

Tepe Reflow Sıcaklığı (°C)

260

Terminal Sayısı

8

Max Power Dissipation

1.5W

Rise Time

1.17ns

Pin Sayısı

8

Tepe Reflow Süresi (maks. sn)

40

RoHS Durumu

RoHS Compliant

Pulsed Drain Currentmax Idm

30A

Akım Değeri

9A

Terminal Formu

NO LEAD

Fet Feature

Logic Level Gate

Vgsth Max Id

1V @ 250μA

Montaj

Surface Mount

Drainsource On Resistancemax

0.026Ohm

Fall Time Typ

1.17 ns

Ambalaj

Tape & Reel (TR)

Yayın Yılı

2009

Pin Sayısı

8

Drain Currentmax Abs Id

6A

Fet Type

2 N-Channel (Dual)

Voltage Rated Dc

20V