Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Gate Charge Qg Max Vgs
- 12nC @ 10V
- Current Continuous Drain Id25
- 5.5A 6.3A
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Max Power Dissipation
- 810mW
- Rds On Max Id Vgs
- 17.4m Ω @ 9A, 10V
- Operating Mode
- ENHANCEMENT MODE
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Fabrika Tedarik Süresi
- 10 Weeks
- JESD-609 Kodu
- e3
- Ambalaj
- Tape & Reel (TR)
- Montaj
- Surface Mount
- Vgsth Max Id
- 2.2V @ 250μA
- Drain To Source Voltage Vdss
- 30V
- ECCN Kodu
- EAR99
- RoHS Durumu
- ROHS3 Compliant
- Fet Feature
- Standard
- Fet Type
- 2 N-Channel (Dual) Asymmetrical
- Yayın Yılı
- 2013
- Drain Currentmax Abs Id
- 13A
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Power Max
- 800mW 810mW
- Parça Durumu
- Active
- Continuous Drain Current Id
- 6.3A
- Input Capacitance Ciss Max Vds
- 605pF @ 15V
- Kılıf / Paket
- 8-PowerWDFN
- Montaj Tipi
- Surface Mount
- Terminal Kaplaması
- Tin (Sn)
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