NTLJD4150PTBG

Specifications

ECCN Kodu

EAR99

Drainsource On Resistancemax

0.135Ohm

Configuration

SINGLE WITH BUILT-IN DIODE

Montaj

Surface Mount

Qualification Status

Not Qualified

Vgsth Max Id

2V @ 250μA

Transistor Element Material

SILICON

Drain To Source Voltage Vdss

30V

Terminal Formu

NO LEAD

Fet Feature

Logic Level Gate

Tepe Reflow Süresi (maks. sn)

40

Pulsed Drain Currentmax Idm

14A

RoHS Durumu

RoHS Compliant

JESD-609 Kodu

e3

Case Connection

DRAIN

Ambalaj

Tape & Reel (TR)

Transistor Application

SWITCHING

Terminal Sayısı

6

Ds Breakdown Voltagemin

30V

Tepe Reflow Sıcaklığı (°C)

260

Operating Mode

ENHANCEMENT MODE

Çalışma Sıcaklığı

-55°C~150°C TJ

Gate Charge Qg Max Vgs

4.5nC @ 4.5V

Pin Sayısı

6

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Rds On Max Id Vgs

135m Ω @ 4A, 10V

HTS Kodu

8541.29.00.95

Max Power Dissipation

700mW

Input Capacitance Ciss Max Vds

300pF @ 15V

Kılıf / Paket

6-WDFN Exposed Pad

Terminal Kaplaması

Tin (Sn)

Montaj Tipi

Surface Mount

Kurşunsuz

Lead Free

Power Max

700mW

Nem Hassasiyeti (MSL)

1 (Unlimited)

Lifecycle Status

LAST SHIPMENTS (Last Updated: 2 days ago)

Kurşunsuz Kodu

yes

Continuous Drain Current Id

1.8A

Parça Durumu

Obsolete

Pin Sayısı

6