Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Operating Mode
- ENHANCEMENT MODE
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Element Configuration
- Dual
- Terminal Sayısı
- 6
- Transistor Application
- SWITCHING
- Rise Time
- 9ns
- Max Power Dissipation
- 710mW
- Rds On Max Id Vgs
- 68m Ω @ 2A, 4.5V
- Pin Sayısı
- 6
- Gate Charge Qg Max Vgs
- 7nC @ 4.5V
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Current Continuous Drain Id25
- 2.6A 2.2A
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- RoHS Durumu
- RoHS Compliant
- Terminal Formu
- NO LEAD
- Fet Feature
- Logic Level Gate
- Vgsth Max Id
- 1V @ 250μA
- Qualification Status
- Not Qualified
- Montaj
- Surface Mount
- Transistor Element Material
- SILICON
- ECCN Kodu
- EAR99
- Gate To Source Voltage Vgs
- 8V
- Fall Time Typ
- 12.5 ns
- Ambalaj
- Tape & Reel (TR)
- Polaritychannel Type
- N-CHANNEL AND P-CHANNEL
- JESD-609 Kodu
- e3
- Case Connection
- DRAIN
- Number Of Elements
- 2
- Yayın Yılı
- 2008
- Pin Sayısı
- 6
- Fet Type
- N and P-Channel
- Turn Off Delay Time
- 14 ns
- Drain To Source Breakdown Voltage
- 20V
- Kurşunsuz
- Lead Free
- Montaj Tipi
- Surface Mount
- Terminal Kaplaması
- Tin (Sn)
- Input Capacitance Ciss Max Vds
- 355pF @ 10V
- Kılıf / Paket
- 6-WDFN Exposed Pad
- Power Dissipation
- 1.5W
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