NTLJD3115PTAG

Specifications

Tepe Reflow Sıcaklığı (°C)

260

Terminal Sayısı

6

Drain To Source Breakdown Voltage

-20V

Element Configuration

Dual

Operating Mode

ENHANCEMENT MODE

JESD-609 Kodu

e3

Yüzey Montaj

YES

Kurşunsuz Kodu

yes

Yayın Yılı

2006

Kılıf / Paket

6-WDFN Exposed Pad

Rise Time

15ns

Temel Parça No

NTLJD3115P

Terminal Formu

C BEND

Transistor Application

SWITCHING

Drainsource On Resistancemax

0.135Ohm

Pin Sayısı

6

Gate Charge Qg Max Vgs

6.2nC @ 4.5V

Pin Sayısı

6

Additional Feature

LOGIC LEVEL COMPATIBLE

Terminal Kaplaması

Tin (Sn)

Transistor Element Material

SILICON

Fet Feature

Logic Level Gate

Continuous Drain Current Id

-4.1A

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Current Continuous Drain Id25

2.3A

Tepe Reflow Süresi (maks. sn)

40

Vgsth Max Id

1V @ 250μA

Case Connection

DRAIN

Drain To Source Voltage Vdss

20V

Montaj Tipi

Surface Mount

Turn Off Delay Time

19.8 ns

Fet Type

2 P-Channel (Dual)

Qualification Status

Not Qualified

Input Capacitance Ciss Max Vds

531pF @ 10V

RoHS Durumu

RoHS Compliant

Number Of Elements

2

Max Power Dissipation

710mW

Fall Time Typ

15 ns

ECCN Kodu

EAR99

Drain Currentmax Abs Id

2.3A