Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Qualification Status
- Not Qualified
- Fet Type
- N and P-Channel
- Yayın Yılı
- 2007
- Kurşunsuz Kodu
- yes
- RoHS Durumu
- RoHS Compliant
- Kılıf / Paket
- 6-WDFN Exposed Pad
- Max Power Dissipation
- 520mW
- Number Of Elements
- 2
- Polaritychannel Type
- N-CHANNEL AND P-CHANNEL
- ECCN Kodu
- EAR99
- Transistor Application
- SWITCHING
- Terminal Formu
- C BEND
- Tepe Reflow Sıcaklığı (°C)
- 265
- Case Connection
- DRAIN
- Terminal Sayısı
- 6
- Element Configuration
- Dual
- Drain To Source Breakdown Voltage
- 8V
- Operating Mode
- ENHANCEMENT MODE
- JESD-609 Kodu
- e3
- Montaj Tipi
- Surface Mount
- Ambalaj
- Tape & Reel (TR)
- Continuous Drain Current Id
- 2.5A
- Lifecycle Status
- LAST SHIPMENTS (Last Updated: 2 days ago)
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Gate To Source Voltage Vgs
- 8V
- Vgsth Max Id
- 1V @ 250μA
- Tepe Reflow Süresi (maks. sn)
- 40
- Drainsource On Resistancemax
- 0.05Ohm
- Pin Sayısı
- 6
- Pin Sayısı
- 6
- Terminal Kaplaması
- Matte Tin (Sn)
- Rds On Max Id Vgs
- 50m Ω @ 4A, 4.5V
- Transistor Element Material
- SILICON
- Power Dissipation
- 520mW
- Kurşunsuz
- Lead Free
- Montaj
- Surface Mount
- Fet Feature
- Standard
- Parça Durumu
- Obsolete
- Çalışma Sıcaklığı
- -55°C~150°C TJ
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