Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Yüzey Montaj
- YES
- JESD-609 Kodu
- e3
- Operating Mode
- ENHANCEMENT MODE
- Element Configuration
- Dual
- Drain To Source Breakdown Voltage
- 60V
- Terminal Sayısı
- 6
- Transistor Application
- SWITCHING
- Terminal Formu
- GULL WING
- Kılıf / Paket
- 6-TSSOP, SC-88, SOT-363
- Rise Time
- 34ns
- Temel Parça No
- NTJD5121N
- Yayın Yılı
- 2011
- Kurşunsuz Kodu
- yes
- Yükseklik
- 1mm
- Fet Feature
- Logic Level Gate
- Transistor Element Material
- SILICON
- Terminal Kaplaması
- Tin (Sn)
- Additional Feature
- LOW THRESHOLD
- Pin Sayısı
- 6
- Gate Charge Qg Max Vgs
- 0.9nC @ 4.5V
- Pin Sayısı
- 6
- Vgsth Max Id
- 2.5V @ 250μA
- Threshold Voltage
- 1.7V
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Turn On Delay Time
- 22 ns
- Continuous Drain Current Id
- 295mA
- Turn Off Delay Time
- 34 ns
- Reach Svhc
- No SVHC
- Uzunluk
- 2.2mm
- Montaj Tipi
- Surface Mount
- Drain To Source Voltage Vdss
- 60V
- ECCN Kodu
- EAR99
- Genişlik
- 1.35mm
- Fall Time Typ
- 32 ns
- Max Power Dissipation
- 250mW
- Number Of Elements
- 2
- RoHS Durumu
- ROHS3 Compliant
- Input Capacitance Ciss Max Vds
- 26pF @ 20V
- Radyasyon Dayanımı
- No
- Fet Type
- 2 N-Channel (Dual)
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