NTJD4152PT2G

Specifications

Power Max

272mW

Drainsource On Resistancemax

0.26Ohm

Rds On Max Id Vgs

260m Ω @ 880mA, 4.5V

Terminal Kaplaması

Tin (Sn)

Gate Charge Qg Max Vgs

2.2nC @ 4.5V

Drain Currentmax Abs Id

0.88A

Transistor Element Material

SILICON

Fet Feature

Standard

Çalışma Sıcaklığı

-55°C~150°C TJ

Parça Durumu

Active

Fabrika Tedarik Süresi

11 Weeks

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

Nem Hassasiyeti (MSL)

1 (Unlimited)

Continuous Drain Current Id

880mA

Ambalaj

Tape & Reel (TR)

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Vgsth Max Id

1.2V @ 250μA

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Ds Breakdown Voltagemin

20V

Terminal Sayısı

6

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Operating Mode

ENHANCEMENT MODE

Jesd30 Code

R-PDSO-G6

Drain To Source Voltage Vdss

20V

Montaj Tipi

Surface Mount

JESD-609 Kodu

e3

Yüzey Montaj

YES

Fet Type

2 P-Channel (Dual)

Yayın Yılı

2015

Input Capacitance Ciss Max Vds

155pF @ 20V

Number Of Elements

2

Max Power Dissipation

272mW

Kılıf / Paket

6-TSSOP, SC-88, SOT-363

RoHS Durumu

ROHS3 Compliant

Transistor Application

SWITCHING

Terminal Formu

GULL WING

ECCN Kodu

EAR99