NTJD4152PT1

Specifications

Voltage Rated Dc

-20V

Terminal Kaplaması

Tin/Lead (Sn/Pb)

Rds On Max Id Vgs

260m Ω @ 880mA, 4.5V

Pin Sayısı

6

Drain Currentmax Abs Id

0.88A

Pin Sayısı

6

Gate Charge Qg Max Vgs

2.2nC @ 4.5V

Kurşunsuz

Contains Lead

Power Dissipation

272mW

Transistor Element Material

SILICON

Çalışma Sıcaklığı

-55°C~150°C TJ

Parça Durumu

Obsolete

Fet Feature

Logic Level Gate

Montaj

Surface Mount

Nem Hassasiyeti (MSL)

1 (Unlimited)

Ambalaj

Tape & Reel (TR)

Continuous Drain Current Id

880mA

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Akım Değeri

-880mA

Tepe Reflow Süresi (maks. sn)

30

Gate To Source Voltage Vgs

12V

Vgsth Max Id

1.2V @ 250μA

Terminal Sayısı

6

Tepe Reflow Sıcaklığı (°C)

240

Operating Mode

ENHANCEMENT MODE

Drain To Source Breakdown Voltage

-20V

Drain To Source Voltage Vdss

20V

Element Configuration

Dual

Montaj Tipi

Surface Mount

JESD-609 Kodu

e0

Turn Off Delay Time

13.5 ns

Qualification Status

Not Qualified

Fet Type

2 P-Channel (Dual)

Input Capacitance Ciss Max Vds

155pF @ 20V

Yayın Yılı

2007

Max Power Dissipation

272mW

Number Of Elements

2

REACH Uyumluluk Kodu

not_compliant

Fall Time Typ

6.5 ns

Temel Parça No

NTJD4152P