Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Transistor Element Material
- SILICON
- Fet Feature
- Logic Level Gate
- Drainsource On Resistancemax
- 0.375Ohm
- Terminal Kaplaması
- Tin/Lead (Sn/Pb)
- Gate Charge Qg Max Vgs
- 3nC @ 4.5V
- Pin Sayısı
- 6
- Pin Sayısı
- 6
- Akım Değeri
- 630mA
- Current Continuous Drain Id25
- 630mA 775mA
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Vgsth Max Id
- 1.5V @ 250μA
- Tepe Reflow Süresi (maks. sn)
- 30
- HTS Kodu
- 8541.21.00.95
- Continuous Drain Current Id
- 775mA
- JESD-609 Kodu
- e0
- Yüzey Montaj
- YES
- Terminal Sayısı
- 6
- Tepe Reflow Sıcaklığı (°C)
- 240
- Operating Mode
- ENHANCEMENT MODE
- Element Configuration
- Dual
- Drain To Source Breakdown Voltage
- -8V
- Kılıf / Paket
- 6-TSSOP, SC-88, SOT-363
- Rise Time
- 23ns
- Temel Parça No
- NTJD4105C
- Transistor Application
- SWITCHING
- Terminal Formu
- GULL WING
- Yayın Yılı
- 2006
- Kurşunsuz
- Contains Lead
- Power Dissipation
- 270mW
- Parça Durumu
- Obsolete
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Rds On Max Id Vgs
- 375m Ω @ 630mA, 4.5V
- Drain Currentmax Abs Id
- 1.1A
- Gate To Source Voltage Vgs
- 8V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Ambalaj
- Tape & Reel (TR)
- Montaj Tipi
- Surface Mount
- Turn Off Delay Time
- 50 ns
- Drain To Source Voltage Vdss
- 20V 8V
- Number Of Elements
- 2
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