NTJD2152PT4G

Specifications

Drainsource On Resistancemax

0.3Ohm

Voltage Rated Dc

-8V

Gate Charge Qg Max Vgs

4nC @ 4.5V

Drain Currentmax Abs Id

0.775A

Pin Sayısı

6

Rds On Max Id Vgs

300m Ω @ 570mA, 4.5V

Terminal Kaplaması

Tin (Sn)

Transistor Element Material

SILICON

Power Dissipation

270mW

Kurşunsuz

Lead Free

Montaj

Surface Mount

Fet Feature

Logic Level Gate

Çalışma Sıcaklığı

-55°C~150°C TJ

Parça Durumu

Obsolete

Continuous Drain Current Id

775mA

Ambalaj

Tape & Reel (TR)

Nem Hassasiyeti (MSL)

1 (Unlimited)

Akım Değeri

-775mA

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Vgsth Max Id

1V @ 250μA

Gate To Source Voltage Vgs

8V

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Tepe Reflow Sıcaklığı (°C)

260

Terminal Sayısı

6

Element Configuration

Dual

Jesd30 Code

R-PDSO-G6

Drain To Source Breakdown Voltage

-8V

Operating Mode

ENHANCEMENT MODE

JESD-609 Kodu

e3

Montaj Tipi

Surface Mount

Turn Off Delay Time

50 ns

Fet Type

2 P-Channel (Dual)

Qualification Status

Not Qualified

Feedback Capmax Crss

40 pF

Yayın Yılı

2006

Input Capacitance Ciss Max Vds

225pF @ 8V

Kılıf / Paket

6-TSSOP, SC-88, SOT-363

RoHS Durumu

RoHS Compliant

Rise Time

23ns

Temel Parça No

NTJD2152P