NTJD1155LT1

Specifications

Qualification Status

Not Qualified

Fet Type

N and P-Channel

Kurşunsuz Kodu

no

Yayın Yılı

2009

Max Power Dissipation

400mW

Number Of Elements

2

REACH Uyumluluk Kodu

not_compliant

Temel Parça No

NTJD1155

RoHS Durumu

Non-RoHS Compliant

Kılıf / Paket

6-TSSOP, SC-88, SOT-363

Terminal Formu

GULL WING

Transistor Application

SWITCHING

ECCN Kodu

EAR99

Polaritychannel Type

N-CHANNEL AND P-CHANNEL

Terminal Sayısı

6

Tepe Reflow Sıcaklığı (°C)

240

Operating Mode

ENHANCEMENT MODE

Drain To Source Breakdown Voltage

-8V

Drain To Source Voltage Vdss

8V

Element Configuration

Dual

Montaj Tipi

Surface Mount

JESD-609 Kodu

e0

Yüzey Montaj

YES

Nem Hassasiyeti (MSL)

1 (Unlimited)

Lifecycle Status

OBSOLETE (Last Updated: 2 weeks ago)

Ambalaj

Tape & Reel (TR)

Continuous Drain Current Id

1.3A

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Akım Değeri

-1.3A

Tepe Reflow Süresi (maks. sn)

30

Gate To Source Voltage Vgs

1V

Vgsth Max Id

1V @ 250μA

Voltage Rated Dc

-8V

Drainsource On Resistancemax

0.175Ohm

Rds On Max Id Vgs

175m Ω @ 1.2A, 4.5V

Terminal Kaplaması

Tin/Lead (Sn80Pb20)

Pin Sayısı

6

Pin Sayısı

6

Kurşunsuz

Contains Lead

Transistor Element Material

SILICON