Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Voltage Rated Dc
- 20V
- Uzunluk
- 3.1mm
- Vgsth Max Id
- 1.2V @ 250μA
- Lifecycle Status
- ACTIVE (Last Updated: 11 hours ago)
- Fet Feature
- Logic Level Gate
- Rise Time
- 15ns
- Drainsource On Resistancemax
- 0.075Ohm
- Gate Charge Qg Max Vgs
- 4nC @ 4.5V
- Reach Svhc
- No SVHC
- Max Power Dissipation
- 2.1W
- Montaj Tipi
- Surface Mount
- Fabrika Tedarik Süresi
- 6 Weeks
- Turn On Delay Time
- 5 ns
- Temel Parça No
- NTHD4508N
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Number Of Elements
- 2
- Element Configuration
- Dual
- Terminal Sayısı
- 8
- Power Dissipation
- 1.13W
- Tepe Reflow Süresi (maks. sn)
- 40
- Rds On Max Id Vgs
- 75m Ω @ 3.1A, 4.5V
- Drain To Source Breakdown Voltage
- 20V
- Kurşunsuz
- Lead Free
- Pin Sayısı
- 8
- Kılıf / Paket
- 8-SMD, Flat Lead
- Pin Sayısı
- 8
- Tepe Reflow Sıcaklığı (°C)
- 260
- Kurşunsuz Kodu
- yes
- Current Continuous Drain Id25
- 3A
- Yükseklik
- 1.1mm
- RoHS Durumu
- ROHS3 Compliant
- Yüzey Montaj
- YES
- Terminal Kaplaması
- Tin (Sn)
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Radyasyon Dayanımı
- No
- Genişlik
- 1.7mm
- Ambalaj
- Tape & Reel (TR)
- Threshold Voltage
- 1.2V
- Transistor Element Material
- SILICON
- Yayın Yılı
- 2004
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