Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Voltage Rated Dc
- -20V
- Vgsth Max Id
- 1.2V @ 250μA
- RoHS Durumu
- RoHS Compliant
- Lifecycle Status
- LAST SHIPMENTS (Last Updated: 8 hours ago)
- Drainsource On Resistancemax
- 0.155Ohm
- Terminal Kaplaması
- Tin (Sn)
- Rise Time
- 13ns
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Fet Feature
- Logic Level Gate
- Montaj Tipi
- Surface Mount
- Max Power Dissipation
- 1.1W
- Gate Charge Qg Max Vgs
- 6nC @ 4.5V
- Temel Parça No
- NTHD4401P
- Ambalaj
- Tape & Reel (TR)
- Number Of Elements
- 2
- Transistor Element Material
- SILICON
- Configuration
- SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Transistor Application
- SWITCHING
- Operating Mode
- ENHANCEMENT MODE
- Terminal Formu
- C BEND
- Terminal Sayısı
- 8
- Yayın Yılı
- 2005
- Power Dissipation
- 1.1W
- Fet Type
- 2 P-Channel (Dual)
- Tepe Reflow Süresi (maks. sn)
- 40
- Akım Değeri
- -2.1A
- Drain To Source Breakdown Voltage
- -20V
- Rds On Max Id Vgs
- 155m Ω @ 2.1A, 4.5V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Parça Durumu
- Obsolete
- Input Capacitance Ciss Max Vds
- 300pF @ 10V
- Turn Off Delay Time
- 33 ns
- JESD-609 Kodu
- e3
- Kurşunsuz
- Lead Free
- Gate To Source Voltage Vgs
- 12V
- Drain To Source Voltage Vdss
- 20V
- Montaj
- Surface Mount
- Kılıf / Paket
- 8-SMD, Flat Lead
- Pin Sayısı
- 8
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