NTHD4102PT3G

Specifications

Vgsth Max Id

1.5V @ 250μA

Fet Feature

Logic Level Gate

Terminal Kaplaması

Tin (Sn)

Rise Time

12ns

Çalışma Sıcaklığı

-55°C~150°C TJ

RoHS Durumu

RoHS Compliant

Lifecycle Status

LAST SHIPMENTS (Last Updated: 2 weeks ago)

Yüzey Montaj

YES

Ambalaj

Tape & Reel (TR)

Temel Parça No

NTHD4102P

Gate Charge Qg Max Vgs

8.6nC @ 4.5V

Montaj Tipi

Surface Mount

Max Power Dissipation

1.1W

Terminal Sayısı

8

Yayın Yılı

2005

Transistor Application

SWITCHING

Terminal Formu

C BEND

Operating Mode

ENHANCEMENT MODE

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Element Configuration

Dual

Number Of Elements

2

Transistor Element Material

SILICON

Fet Type

2 P-Channel (Dual)

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Power Dissipation

1.1W

JESD-609 Kodu

e3

Input Capacitance Ciss Max Vds

750pF @ 16V

Additional Feature

LOGIC LEVEL COMPATIBLE

Turn Off Delay Time

32 ns

Nem Hassasiyeti (MSL)

1 (Unlimited)

Parça Durumu

Obsolete

Drain To Source Breakdown Voltage

-20V

Rds On Max Id Vgs

80m Ω @ 2.9A, 4.5V

Pin Sayısı

8

Fall Time Typ

12 ns

Kılıf / Paket

8-SMD, Flat Lead

Kurşunsuz

Lead Free

Gate To Source Voltage Vgs

8V

Drain To Source Voltage Vdss

20V

Continuous Drain Current Id

2.9A