NTHD3100CT3G

Specifications

Qualification Status

Not Qualified

Pin Sayısı

8

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Drain Currentmax Abs Id

2.9A

ECCN Kodu

EAR99

Continuous Drain Current Id

3.2A

Gate To Source Voltage Vgs

8V

Kurşunsuz

Lead Free

Fall Time Typ

11.7 ns

Pin Sayısı

8

Kılıf / Paket

8-SMD, Flat Lead

Parça Durumu

Obsolete

Nem Hassasiyeti (MSL)

1 (Unlimited)

Rds On Max Id Vgs

80m Ω @ 2.9A, 4.5V

Drain To Source Breakdown Voltage

-20V

JESD-609 Kodu

e3

Turn Off Delay Time

16 ns

Input Capacitance Ciss Max Vds

165pF @ 10V

Polaritychannel Type

N-CHANNEL AND P-CHANNEL

Power Dissipation

1.1W

Akım Değeri

3.9A

Fet Type

N and P-Channel

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Transistor Element Material

SILICON

Number Of Elements

2

Element Configuration

Dual

Yayın Yılı

2006

Terminal Sayısı

8

Terminal Formu

C BEND

Pulsed Drain Currentmax Idm

12A

Operating Mode

ENHANCEMENT MODE

Transistor Application

SWITCHING

Gate Charge Qg Max Vgs

2.3nC @ 4.5V

Max Power Dissipation

1.1W

Montaj Tipi

Surface Mount

Temel Parça No

NTHD3100C

Ambalaj

Tape & Reel (TR)

Current Continuous Drain Id25

2.9A 3.2A

RoHS Durumu

RoHS Compliant