NTHD3100CT3

Specifications

Current Continuous Drain Id25

2.9A 3.2A

RoHS Durumu

Non-RoHS Compliant

Yüzey Montaj

YES

Fet Feature

Logic Level Gate

Çalışma Sıcaklığı

-55°C~150°C TJ

Rise Time

11.7ns

Terminal Kaplaması

Tin/Lead (Sn/Pb)

Voltage Rated Dc

20V

Vgsth Max Id

1.2V @ 250μA

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Transistor Element Material

SILICON

Number Of Elements

2

Element Configuration

Dual

Yayın Yılı

2006

Terminal Sayısı

8

Terminal Formu

C BEND

Pulsed Drain Currentmax Idm

12A

Operating Mode

ENHANCEMENT MODE

Transistor Application

SWITCHING

Gate Charge Qg Max Vgs

2.3nC @ 4.5V

Max Power Dissipation

1.1W

Montaj Tipi

Surface Mount

Temel Parça No

NTHD3100C

Ambalaj

Tape & Reel (TR)

Parça Durumu

Obsolete

Nem Hassasiyeti (MSL)

3 (168 Hours)

Rds On Max Id Vgs

80m Ω @ 2.9A, 4.5V

Drain To Source Breakdown Voltage

-20V

JESD-609 Kodu

e0

Turn Off Delay Time

16 ns

Input Capacitance Ciss Max Vds

165pF @ 10V

Polaritychannel Type

N-CHANNEL AND P-CHANNEL

Power Dissipation

1.1W

Akım Değeri

3.9A

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Fet Type

N and P-Channel

Qualification Status

Not Qualified

Pin Sayısı

8

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Drain Currentmax Abs Id

2.9A