NTHD3100CT1

Specifications

Fet Type

N and P-Channel

Akım Değeri

3.9A

Polaritychannel Type

N-CHANNEL AND P-CHANNEL

Turn Off Delay Time

16 ns

Input Capacitance Ciss Max Vds

165pF @ 10V

JESD-609 Kodu

e0

Parça Durumu

Obsolete

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fall Time Typ

11.7 ns

REACH Uyumluluk Kodu

not_compliant

Gate To Source Voltage Vgs

8V

Drain Currentmax Abs Id

2.9A

ECCN Kodu

EAR99

Continuous Drain Current Id

3.2A

Çalışma Sıcaklığı

-55°C~150°C TJ

Yüzey Montaj

YES

Current Continuous Drain Id25

2.9A 3.2A

RoHS Durumu

Non-RoHS Compliant

Ambalaj

Tape & Reel (TR)

Operating Mode

ENHANCEMENT MODE

Pulsed Drain Currentmax Idm

12A

Terminal Formu

C BEND

Transistor Application

SWITCHING

Yayın Yılı

2006

Transistor Element Material

SILICON

Tepe Reflow Süresi (maks. sn)

30

Power Dissipation

1.1W

Drain To Source Breakdown Voltage

-20V

Rds On Max Id Vgs

80m Ω @ 2.9A, 4.5V

Kılıf / Paket

8-SMD, Flat Lead

Pin Sayısı

8

Kurşunsuz

Contains Lead

Kurşunsuz Kodu

no

Pin Sayısı

8

Tepe Reflow Sıcaklığı (°C)

240

Qualification Status

Not Qualified

Vgsth Max Id

1.2V @ 250μA

Voltage Rated Dc

20V

Rise Time

11.7ns

Fet Feature

Logic Level Gate