NTHD2102PT1

Specifications

Voltage Rated Dc

-8V

Vgsth Max Id

1.5V @ 250μA

Lifecycle Status

OBSOLETE (Last Updated: 2 days ago)

RoHS Durumu

Non-RoHS Compliant

Fet Feature

Logic Level Gate

Rise Time

20ns

Çalışma Sıcaklığı

-55°C~150°C TJ

Gate Charge Qg Max Vgs

16nC @ 2.5V

Montaj Tipi

Surface Mount

Max Power Dissipation

1.1W

Ambalaj

Tape & Reel (TR)

Temel Parça No

NTHD2102P

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Number Of Elements

2

Transistor Element Material

SILICON

Terminal Sayısı

8

Yayın Yılı

2005

Terminal Formu

C BEND

Pulsed Drain Currentmax Idm

4.6A

Operating Mode

ENHANCEMENT MODE

Transistor Application

SWITCHING

Power Dissipation

1.1W

Akım Değeri

-3.4A

Fet Type

2 P-Channel (Dual)

Tepe Reflow Süresi (maks. sn)

30

Parça Durumu

Obsolete

Nem Hassasiyeti (MSL)

1 (Unlimited)

Drain To Source Breakdown Voltage

-8V

Rds On Max Id Vgs

58m Ω @ 3.4A, 4.5V

JESD-609 Kodu

e0

Input Capacitance Ciss Max Vds

715pF @ 6.4V

Turn Off Delay Time

20 ns

Kurşunsuz

Contains Lead

Gate To Source Voltage Vgs

8V

REACH Uyumluluk Kodu

not_compliant

Fall Time Typ

20 ns

Pin Sayısı

8

Kılıf / Paket

8-SMD, Flat Lead

Montaj

Surface Mount