NTHC5513T1G

Specifications

Kurşunsuz Kodu

yes

Tepe Reflow Sıcaklığı (°C)

260

Pin Sayısı

8

Kılıf / Paket

8-SMD, Flat Lead

Pin Sayısı

8

Kurşunsuz

Lead Free

Rds On Max Id Vgs

80m Ω @ 2.9A, 4.5V

Drain To Source Breakdown Voltage

-20V

Tepe Reflow Süresi (maks. sn)

40

Power Dissipation

1.1W

Terminal Sayısı

8

Number Of Elements

2

Element Configuration

Dual

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Temel Parça No

NTHC5513

Turn On Delay Time

7 ns

Fabrika Tedarik Süresi

2 Weeks

Montaj Tipi

Surface Mount

Max Power Dissipation

1.1W

Reach Svhc

No SVHC

Gate Charge Qg Max Vgs

4nC @ 4.5V

Rise Time

13ns

Fet Feature

Logic Level Gate

Lifecycle Status

ACTIVE (Last Updated: 1 week ago)

Vgsth Max Id

1.2V @ 250μA

Uzunluk

3.1mm

Voltage Rated Dc

20V

Continuous Drain Current Id

3.9A

ECCN Kodu

EAR99

Gate To Source Voltage Vgs

12V

Turn Off Delay Time

33 ns

Input Capacitance Ciss Max Vds

180pF @ 10V

JESD-609 Kodu

e3

Nominal Vgs

600 mV

Weight

4.535924g

Nem Hassasiyeti (MSL)

1 (Unlimited)

Parça Durumu

Active

Fet Type

N and P-Channel

Akım Değeri

3.1A

Polaritychannel Type

N-CHANNEL AND P-CHANNEL