NTGD3149CT1G

Specifications

Vgsth Max Id

1V @ 250μA

RoHS Durumu

RoHS Compliant

Current Continuous Drain Id25

3.2A 2.4A

Lifecycle Status

LAST SHIPMENTS (Last Updated: 5 days ago)

Çalışma Sıcaklığı

-55°C~150°C TJ

Rise Time

5.3ns

Terminal Kaplaması

Tin (Sn)

Fet Feature

Logic Level Gate

Max Power Dissipation

900mW

Montaj Tipi

Surface Mount

Gate Charge Qg Max Vgs

5.5nC @ 4.5V

Ambalaj

Tape & Reel (TR)

Transistor Element Material

SILICON

Number Of Elements

2

Element Configuration

Dual

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Transistor Application

SWITCHING

Terminal Formu

GULL WING

Operating Mode

ENHANCEMENT MODE

Yayın Yılı

2008

Terminal Sayısı

6

Power Dissipation

900mW

Polaritychannel Type

N-CHANNEL AND P-CHANNEL

Fet Type

N and P-Channel

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Rds On Max Id Vgs

60m Ω @ 3.5A, 4.5V

Drain To Source Breakdown Voltage

20V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Parça Durumu

Obsolete

Input Capacitance Ciss Max Vds

387pF @ 10V

Turn Off Delay Time

33.3 ns

JESD-609 Kodu

e3

Gate To Source Voltage Vgs

8V

Kurşunsuz

Lead Free

Montaj

Surface Mount

Kılıf / Paket

SOT-23-6 Thin, TSOT-23-6

Pin Sayısı

6

Fall Time Typ

29.5 ns

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Pin Sayısı

6