NSVMUN5312DW1T3G

Specifications

Transistor Element Material

SILICON

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Resistor Base R1

22k Ω

Nem Hassasiyeti (MSL)

1 (Unlimited)

Collector Emitter Voltage Vceo

250mV

Parça Durumu

Active

Resistor Emitter Base R2

22k Ω

Terminal Formu

GULL WING

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Yayın Yılı

2014

RoHS Durumu

ROHS3 Compliant

Kurşunsuz

Lead Free

Transistor Type

1 NPN, 1 PNP - Pre-Biased (Dual)

Transistor Application

SWITCHING

Operating Temperature Max

150°C

Fabrika Tedarik Süresi

8 Weeks

Montaj Tipi

Surface Mount

Collectoremitter Breakdown Voltage

50V

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Power Max

250mW

Max Power Dissipation

250mW

Vce Saturation Max Ib Ic

250mV @ 300μA, 10mA

Kılıf / Paket

6-TSSOP, SC-88, SOT-363

Dc Current Gain Hfe Min Ic Vce

60 @ 5mA 10V

Operating Temperature Min

-55°C

Kurşunsuz Kodu

yes

Reference Standard

AEC-Q101

JESD-609 Kodu

e3

Montaj

Surface Mount

Jesd30 Code

R-PDSO-G6

Current Collector Cutoff Max

500nA

Polaritychannel Type

NPN AND PNP

Max Collector Current

100mA

Ambalaj

Tape & Reel (TR)

Terminal Sayısı

6

Additional Feature

BUILT IN BIAS RESISTANCE RATIO IS 1

Number Of Elements

2

Terminal Kaplaması

Tin (Sn)

Lifecycle Status

ACTIVE (Last Updated: 3 days ago)