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NSVMBD54DWT1G

ON Semiconductor

NSVMBD54DWT1G

Rectifier Diode Array

RoHS: Compliant

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Specifications

Number Of Phases
1
Current Reverse Leakage Vr
2μA @ 25V
Max Reverse Voltage Dc
30V
Fabrika Tedarik Süresi
8 Weeks
Operating Temperature Max
125°C
Kurşunsuz
Lead Free
RoHS Durumu
ROHS3 Compliant
Yayın Yılı
2009
Output Currentmax
0.2A
Terminal Formu
GULL WING
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Parça Durumu
Active
Average Rectified Current
200mA
Nem Hassasiyeti (MSL)
1 (Unlimited)
Terminal Pozisyonu
DUAL
Operating Temperature Junction
125°C Max
Diode Configuration
2 Independent
Reverse Currentmax
2μA
Lifecycle Status
ACTIVE (Last Updated: 2 weeks ago)
Number Of Elements
2
Terminal Kaplaması
Tin (Sn)
Terminal Sayısı
6
Nonrep Pk Forward Currentmax
0.6A
Ambalaj
Tape & Reel (TR)
Diode Type
Schottky
Power Dissipation Max
0.15W
Reverse Test Voltage
25V
Jesd30 Code
R-PDSO-G6
Montaj
Surface Mount
JESD-609 Kodu
e3
Kurşunsuz Kodu
yes
Kılıf / Paket
6-TSSOP, SC-88, SOT-363
Voltage Forward Vf Max If
1V @ 100mA
Voltage Dc Reverse Vr Max
30V
Diode Element Material
SILICON
Seri
Automotive, AEC-Q101
Montaj Tipi
Surface Mount
Reverse Recovery Time
5 ns

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