NSV60101DMTWTBG

Specifications

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Transistor Element Material

SILICON

Transition Frequency

180MHz

Parça Durumu

Active

Collector Emitter Voltage Vceo

180mV

Nem Hassasiyeti (MSL)

1 (Unlimited)

Terminal Formu

NO LEAD

Transistor Application

SWITCHING

Transistor Type

2 NPN (Dual)

Fabrika Tedarik Süresi

5 Weeks

ECCN Kodu

EAR99

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Yayın Yılı

2015

RoHS Durumu

ROHS3 Compliant

Kurşunsuz

Lead Free

Dc Current Gain Hfe Min Ic Vce

120 @ 500mA 2V

Frequency Transition

180MHz

Kurşunsuz Kodu

yes

Reference Standard

AEC-Q101

JESD-609 Kodu

e3

Montaj Tipi

Surface Mount

Collectoremitter Breakdown Voltage

60V

Vcesatmax

0.2 V

Configuration

SEPARATE, 2 ELEMENTS

Max Power Dissipation

2.27W

Case Connection

COLLECTOR

Vce Saturation Max Ib Ic

180mV @ 100mA, 1A

Kılıf / Paket

6-WDFN Exposed Pad

Power Max

2.27W

Ambalaj

Tape & Reel (TR)

Terminal Sayısı

6

Çalışma Sıcaklığı

-55°C~150°C TJ

Terminal Kaplaması

Tin (Sn)

Number Of Elements

2

Lifecycle Status

ACTIVE (Last Updated: 6 days ago)

Jesd30 Code

S-PDSO-N6

Montaj

Surface Mount

Current Collector Cutoff Max

100nA ICBO

Max Collector Current

1A

Polaritychannel Type

NPN