NSTB1002DXV5T1

Specifications

Jesd30 Code

R-PDSO-F5

Nem Hassasiyeti (MSL)

1 (Unlimited)

Ambalaj

Tape & Reel (TR)

Terminal Pozisyonu

DUAL

JESD-609 Kodu

e3

Number Of Elements

2

Resistor Emitter Base R2

47k Ω

Yayın Yılı

2006

Akım Değeri

100mA

Terminal Sayısı

5

Kılıf / Paket

SOT-553

RoHS Durumu

Non-RoHS Compliant

Currentcollector Ic Max

100mA 200mA

Terminal Kaplaması

Tin (Sn)

Max Collector Current

200mA

Terminal Formu

FLAT

Transistor Type

1 NPN Pre-Biased, 1 PNP

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Current Collector Cutoff Max

500nA

Vce Saturation Max Ib Ic

250mV @ 300μA, 10mA / 400mV @ 5mA, 50mA

Qualification Status

Not Qualified

Montaj

Surface Mount

Transistor Application

SWITCHING

Polaritychannel Type

NPN AND PNP

Pin Sayısı

5

Additional Feature

BUILT IN BIAS RESISTOR RATIO IS 1

Turn Off Timemax Toff

300ns

Configuration

CASCADED, 2 ELEMENTS WITH BUILT-IN RESISTOR

Resistor Base R1

47k Ω

Dc Current Gain Hfe Min Ic Vce

80 @ 5mA 10V / 100 @ 1mA 10V

Turn On Timemax Ton

70ns

Kurşunsuz

Contains Lead

Tepe Reflow Sıcaklığı (°C)

260

ECCN Kodu

EAR99

Frequency Transition

250MHz

Transition Frequency

250MHz

Montaj Tipi

Surface Mount

Collectoremitter Breakdown Voltage

40V

Voltage Collector Emitter Breakdown Max

50V 40V

Max Power Dissipation

500mW