NSM46211DW6T1G

Specifications

Resistor Emitter Base R2

10k Ω

Ambalaj

Tape & Reel (TR)

Vce Saturation Max Ib Ic

250mV @ 300μA, 10mA / 600mV @ 5mA, 100mA

ECCN Kodu

EAR99

RoHS Durumu

RoHS Compliant

Montaj Tipi

Surface Mount

Terminal Pozisyonu

DUAL

Terminal Kaplaması

Tin (Sn)

Kurşunsuz Kodu

yes

Transistor Application

SWITCHING

Max Power Dissipation

230mW

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Max Collector Current

100mA

Dc Current Gain Hfe Min Ic Vce

35 @ 5mA 10V / 200 @ 2mA 5V

Transistor Type

1 NPN Pre-Biased, 1 NPN

Nem Hassasiyeti (MSL)

1 (Unlimited)

Yayın Yılı

2008

Power Max

230mW

Transistor Element Material

SILICON

Terminal Sayısı

6

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Montaj

Surface Mount

Collector Emitter Voltage Vceo

250mV

Polaritychannel Type

NPN

Number Of Elements

2

Pin Sayısı

6

Resistor Base R1

10k Ω

Terminal Formu

GULL WING

JESD-609 Kodu

e3

HTS Kodu

8541.21.00.95

Collectoremitter Breakdown Voltage

65V

Voltage Collector Emitter Breakdown Max

50V 65V

Qualification Status

Not Qualified

Kılıf / Paket

6-TSSOP, SC-88, SOT-363

Current Collector Cutoff Max

500nA

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Parça Durumu

Obsolete

Lifecycle Status

LAST SHIPMENTS (Last Updated: 1 week ago)

Additional Feature

BUILT IN BIAS RESISTOR RATIO IS 1.0

Pin Sayısı

6