NRVBD650CTT4G

Specifications

Montaj Stili

SMD/SMT

Brand Name

ON Semiconductor

Forward Voltagemax Vf

0.9 V

Voltage Dc Reverse Vr Max

50 V

Risk Rank

1.13

Vrrm Repetitive Reverse Voltage

50 V

Moisture Sensitivity Levels

1

Configuration

Dual Anode Common Cathode

Number Of Elements

2

Vf Forward Voltage

900 mV

Diode Type

Schottky

Operating Temperature Junction

-65°C ~ 175°C

Package Shape

RECTANGULAR

Applications

FAST RECOVERY POWER

Nonrep Pk Forward Currentmax

75 A

Package Description

DPAK-3/2

HTS Kodu

8541.10.00.80

Voltage Forward Vf Max If

700 mV @ 3 A

Fabrika Tedarik Süresi

8 Weeks

Current Average Rectified Io Per Diode

3A

Terminal Kaplaması

Tin (Sn)

Minimum Operating Temperature

- 65 C

Birim Ağırlık

0.012381 oz

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Number Of Terminals

2

Qualification

AEC-Q101

Üretici Parça No

NRVBD650CTT4G

Diode Element Material

SILICON

Output Currentmax

3 A

Reference Standard

AEC-Q101

Technology

Si

Paket

Tape & Reel (TR)

Manufacturer Package Code

369C

Operating Temperaturemin

-65 °C

Maks. Çalışma Sıcaklığı

+ 175 C

Breakdown Voltagemin

50 V

Terminal Formu

GULL WING

Kılıf / Paket

TO-252-3

JESD-609 Kodu

e3

Diode Configuration

1 Pair Common Cathode