NRVB8H100MFST1G

Specifications

Terminal Pozisyonu

DUAL

Reference Standard

AEC-Q101

Forward Voltage

900mV

Yayın Yılı

2015

Current Reverse Leakage Vr

2μA @ 100V

Max Repetitive Reverse Voltage Vrrm

100V

Montaj Tipi

Surface Mount

RoHS Durumu

ROHS3 Compliant

ECCN Kodu

EAR99

Kurşunsuz Kodu

yes

REACH Uyumluluk Kodu

not_compliant

Additional Feature

LOW POWER LOSS

Diode Element Material

SILICON

Output Currentmax

8A

Max Reverse Voltage Dc

100V

Peak Nonrepetitive Surge Current

75A

Number Of Phases

1

Parça Durumu

Active

Average Rectified Current

8A

Montaj

Surface Mount

Maks. Çalışma Sıcaklığı

175°C

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Terminal Sayısı

5

Ambalaj

Tape & Reel (TR)

Case Connection

CATHODE

Fabrika Tedarik Süresi

5 Weeks

Terminal Kaplaması

Tin (Sn)

Voltage Forward Vf Max If

900mV @ 8A

Max Forward Surge Current Ifsm

75A

Diode Type

Schottky

Operating Temperature Junction

-55°C~175°C

Number Of Elements

1

Forward Current

8A

Element Configuration

Single

Applications

EFFICIENCY

JESD-609 Kodu

e3

Peak Reverse Current

300μA

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Terminal Formu

FLAT

Kılıf / Paket

8-PowerTDFN, 5 Leads