NRVB830MFST1G

Specifications

Case Connection

CATHODE

Fabrika Tedarik Süresi

5 Weeks

Terminal Kaplaması

Tin (Sn)

Voltage Forward Vf Max If

700mV @ 8A

Diode Type

Schottky

Operating Temperature Junction

-40°C~150°C

Number Of Elements

1

Element Configuration

Single

Applications

EFFICIENCY

JESD-609 Kodu

e3

Peak Reverse Current

200μA

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Terminal Formu

FLAT

Kılıf / Paket

8-PowerTDFN, 5 Leads

Jesd30 Code

R-PDSO-F5

Nem Hassasiyeti (MSL)

1 (Unlimited)

Min. Çalışma Sıcaklığı

-40°C

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Terminal Pozisyonu

DUAL

Reference Standard

AEC-Q101

Yayın Yılı

2013

Current Reverse Leakage Vr

200μA @ 30V

Max Repetitive Reverse Voltage Vrrm

30V

Montaj Tipi

Surface Mount

RoHS Durumu

ROHS3 Compliant

Kurşunsuz Kodu

yes

ECCN Kodu

EAR99

REACH Uyumluluk Kodu

not_compliant

Additional Feature

LOW POWER LOSS

Peak Nonrepetitive Surge Current

150A

Max Reverse Voltage Dc

30V

Output Currentmax

8A

Diode Element Material

SILICON

Number Of Phases

1

Parça Durumu

Active

Average Rectified Current

8A

Montaj

Surface Mount

Maks. Çalışma Sıcaklığı

150°C

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Terminal Sayısı

5