NGD8201NT4

Specifications

Collector Emitter Voltage Vceo

1.9V

Montaj Tipi

Surface Mount

JESD-609 Kodu

e0

Montaj

Surface Mount

Polaritychannel Type

N-CHANNEL

Akım Değeri

20A

Vceon Max Vge Ic

1.9V @ 4.5V, 20A

Td Onoff25c

-/5μs

Yayın Yılı

2009

Power Dissipation

125W

Max Collector Current

20A

Max Power Dissipation

125W

Kurşunsuz

Contains Lead

Parça Durumu

Obsolete

Current Collector Pulsed Icm

50A

RoHS Durumu

Non-RoHS Compliant

Fall Timemax Tf

7000ns

Qualification Status

Not Qualified

Transistor Element Material

SILICON

Tepe Reflow Süresi (maks. sn)

30

Nem Hassasiyeti (MSL)

1 (Unlimited)

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Configuration

SINGLE WITH BUILT-IN DIODE AND RESISTOR

Ambalaj

Tape & Reel (TR)

Turn Off Timenom Toff

18500 ns

Test Conditions

300V, 9A, 1k Ω, 5V

Kurşunsuz Kodu

no

Collectoremitter Breakdown Voltage

440V

REACH Uyumluluk Kodu

not_compliant

Case Connection

COLLECTOR

Rise Timemax

14000ns

Terminal Kaplaması

Tin/Lead (Sn80Pb20)

Voltage Rated Dc

400V

Number Of Elements

1

Gateemitter Voltagemax

15V

Transistor Application

AUTOMOTIVE IGNITION

Çalışma Sıcaklığı

-55°C~175°C TJ

Terminal Pozisyonu

SINGLE

Terminal Sayısı

2

Tepe Reflow Sıcaklığı (°C)

240