Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Terminal Kaplaması
- Tin (Sn)
- Transistor Element Material
- SILICON
- Input Capacitance Ciss Max Vds
- 394pF @ 30V
- Pin Sayısı
- 8
- Montaj Tipi
- Surface Mount
- Turn Off Delay Time
- 16 ns
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Seri
- PowerTrench®
- Genişlik
- 4mm
- Avalanche Energy Rating Eas
- 15 mJ
- Power Dissipation
- 2W
- Rise Time
- 9ns
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- Continuous Drain Current Id
- 2.3A
- Gate To Source Voltage Vgs
- 20V
- Operating Mode
- ENHANCEMENT MODE
- Fall Time Typ
- 3 ns
- Akım Değeri
- -2.3A
- Yayın Yılı
- 2002
- Drain To Source Breakdown Voltage
- -60V
- Number Of Elements
- 2
- Nominal Vgs
- -1.5 V
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Vgsth Max Id
- 3V @ 250μA
- Power Max
- 900mW
- Weight
- 187mg
- Kurşunsuz Kodu
- yes
- Reach Svhc
- No SVHC
- Uzunluk
- 5mm
- RoHS Durumu
- ROHS3 Compliant
- Element Configuration
- Dual
- Ambalaj
- Tape & Reel (TR)
- Fet Feature
- Logic Level Gate
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Transistor Application
- SWITCHING
- Rds On Max Id Vgs
- 250m Ω @ 2.3A, 10V
- Turn On Delay Time
- 6 ns
- Fabrika Tedarik Süresi
- 20 Weeks
- Gate Charge Qg Max Vgs
- 13nC @ 10V
- Terminal Formu
- GULL WING
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