Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Vgsth Max Id
- 2.5V @ 250μA
- Terminal Sayısı
- 6
- Operating Mode
- ENHANCEMENT MODE
- Uzunluk
- 3mm
- Yükseklik
- 900μm
- Input Capacitance Ciss Max Vds
- 20pF @ 25V
- Voltage Rated Dc
- 50V
- Genişlik
- 1.7mm
- Kurşunsuz
- Lead Free
- Element Configuration
- Dual
- Gate Charge Qg Max Vgs
- 1nC @ 10V
- Number Of Elements
- 2
- Radyasyon Dayanımı
- No
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Lifecycle Status
- ACTIVE (Last Updated: 3 days ago)
- Kurşunsuz Kodu
- yes
- Turn Off Delay Time
- 11 ns
- Direnç
- 2Ohm
- Terminal Formu
- GULL WING
- Montaj
- Surface Mount
- Number Of Channels
- 2
- Pin Sayısı
- 6
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Kılıf / Paket
- SOT-23-6 Thin, TSOT-23-6
- Fet Type
- 2 N-Channel (Dual)
- Contact Plating
- Tin
- Akım Değeri
- 350mA
- Transistor Element Material
- SILICON
- Max Power Dissipation
- 700mW
- Transistor Application
- SWITCHING
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Gate To Source Voltage Vgs
- 20V
- Dual Supply Voltage
- 50V
- Fall Time Typ
- 6 ns
- Turn On Delay Time
- 6 ns
- Parça Durumu
- Active
- Fabrika Tedarik Süresi
- 5 Weeks
- Rise Time
- 6ns
- Weight
- 36mg
- Rds On Max Id Vgs
- 2 Ω @ 510mA, 10V
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