Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- JESD-609 Kodu
- e3
- Pin Sayısı
- 8
- Max Power Dissipation
- 2W
- Continuous Drain Current Id
- 2A
- Terminal Formu
- GULL WING
- Rds On Max Id Vgs
- 300m Ω @ 1.5A, 10V
- Avalanche Energy Rating Eas
- 300 mJ
- Yayın Yılı
- 2012
- Additional Feature
- LOGIC LEVEL COMPATIBLE, ULTRA LOW ON RESISTANCE
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- RoHS Durumu
- RoHS Compliant
- Terminal Kaplaması
- Tin (Sn)
- Drainsource On Resistancemax
- 0.3Ohm
- Fet Feature
- Logic Level Gate
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Transistor Application
- SWITCHING
- Montaj Tipi
- Surface Mount
- Gate Charge Qg Max Vgs
- 12.5nC @ 10V
- Element Configuration
- Dual
- Yüzey Montaj
- YES
- Drain To Source Voltage Vdss
- 50V
- Drain Currentmax Abs Id
- 2A
- Pulsed Drain Currentmax Idm
- 10A
- Vgsth Max Id
- 3V @ 250μA
- Ambalaj
- Tape & Reel (TR)
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Parça Durumu
- Obsolete
- ECCN Kodu
- EAR99
- Terminal Sayısı
- 8
- Input Capacitance Ciss Max Vds
- 330pF @ 25V
- Operating Mode
- ENHANCEMENT MODE
- Fet Type
- 2 N-Channel (Dual)
- Ds Breakdown Voltagemin
- 50V
- Number Of Elements
- 2
- Transistor Element Material
- SILICON
- Çalışma Sıcaklığı
- -55°C~150°C TJ
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