MUN5136DW1T1

Specifications

RoHS Durumu

Non-RoHS Compliant

Parça Durumu

Obsolete

Number Of Elements

2

Temel Parça No

MUN51**DW1T

Voltage Rated Dc

-50V

Montaj Tipi

Surface Mount

Kurşunsuz

Contains Lead

Max Power Dissipation

250mW

Montaj

Surface Mount

Tepe Reflow Sıcaklığı (°C)

240

Max Collector Current

100mA

Resistor Emitter Base R2

100k Ω

Jesd30 Code

R-PDSO-G6

Terminal Kaplaması

Tin/Lead (Sn/Pb)

Kılıf / Paket

6-TSSOP, SC-88, SOT-363

Transistor Element Material

SILICON

Terminal Formu

GULL WING

Power Max

250mW

Additional Feature

BUILT-IN BIAS RESISTOR RATIO IS 1

Collector Emitter Voltage Vceo

250mV

Collectoremitter Breakdown Voltage

50V

Polaritychannel Type

PNP

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

ECCN Kodu

EAR99

Transistor Type

2 PNP - Pre-Biased (Dual)

Terminal Sayısı

6

REACH Uyumluluk Kodu

not_compliant

Current Collector Cutoff Max

500nA

Akım Değeri

-100mA

Ambalaj

Tape & Reel (TR)

Dc Current Gain Hfe Min Ic Vce

80 @ 5mA 10V

Yayın Yılı

2005

Tepe Reflow Süresi (maks. sn)

30

Pin Sayısı

6

JESD-609 Kodu

e0

Nem Hassasiyeti (MSL)

1 (Unlimited)

Vce Saturation Max Ib Ic

250mV @ 300μA, 10mA

Qualification Status

Not Qualified

Transistor Application

SWITCHING

Resistor Base R1

100k Ω