MTW8N60E

Specifications

Ppap

No

Hts

8541.29.00.95

Lead Shape

Through Hole

Channel Mode

Enhancement

Maximum Gate Source Leakage Current Na

100

Maximum Gate Threshold Voltage V

4

Typical Gate Charge Vgs Nc

67@10V

Category

Power MOSFET

Eccn Us

EAR99

Number Of Elements Per Chip

1

Maximum Operating Temperature C

150

Typical Input Capacitance Vds Pf

2480@25V

Package Height

20.9

Svhc Exceeds Threshold

Yes

Typical Rise Time Ns

37.6

Automotive

No

Parça Durumu

Obsolete

Mounting

Through Hole

Pin Sayısı

3

Supplier Package

TO-247

Maximum Gate Source Voltage V

±20

Ambalaj

Rail

Maximum Idss Ua

10

Maximum Drain Source Resistance Mohm

550@10V

Channel Type

N

Pcb Changed

3

Minimum Operating Temperature C

-55

Package Length

15.95

Maximum Power Dissipation Mw

180000

Typical Fall Time Ns

48

Typical Turnoff Delay Time Ns

80

Eu Rohs

Not Compliant

Maximum Drain Source Voltage V

600

Package Width

5.21

Maximum Continuous Drain Current A

8

Typical Turnon Delay Time Ns

23.6

Configuration

Single

Tab

Tab

Svhc

Yes

Standard Package Name

TO-247