MTP4N80E

Specifications

Maximum Power Dissipation Mw

125000

Package Body Material

PLASTIC/EPOXY

Package Style

FLANGE MOUNT

Ds Breakdown Voltagemin

800 V

Operating Mode

ENHANCEMENT MODE

Ihs Manufacturer

SEMICONDUCTOR TECHNOLOGY INC

Svhc Exceeds Threshold

Yes

Rohs Code

Yes

REACH Uyumluluk Kodu

compliant

Yüzey Montaj

NO

Pin Sayısı

3

Pcb Changed

3

Channel Type

N

Terminal Pozisyonu

SINGLE

Polaritychannel Type

N-CHANNEL

Maximum Operating Temperature C

150

Package Width

4.57(Max)

Typical Input Capacitance Vds Pf

1320@25V

Package Height

9.27(Max)

Typical Gate Charge10v Nc

36

Drainsource On Resistancemax

3 Ω

Tab

Tab

Material

Si

Terminal Formu

THROUGH-HOLE

Typical Rise Time Ns

36

Category

Power MOSFET

Jesd30 Code

R-PSFM-T3

Mounting

Through Hole

Part Life Cycle Code

Contact Manufacturer

Maximum Continuous Drain Current A

4

Supplier Package

TO-220

Transistor Element Material

SILICON

Eccn Us

EAR99

Number Of Terminals

3

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Minimum Operating Temperature C

-55

Package Length

10.54(Max)

Parça Durumu

Obsolete

Number Of Elements Per Chip

1

Svhc

Yes