MTP1N100E

Specifications

Maximum Idss Ua

10

Ds Breakdown Voltagemin

1000 V

Maximum Drain Source Resistance Mohm

9000@10V

Qualification Status

Not Qualified

Supplier Package

TO-220AB

Package Height

9.28(Max)

Rohs Code

No

Operating Temperaturemax

150 °C

Typical Fall Time Ns

34

Lead Shape

Through Hole

Package Length

10.28(Max)

Process Technology

TMOS

Category

Power MOSFET

JESD-609 Kodu

e0

Package Body Material

PLASTIC/EPOXY

Yüzey Montaj

NO

Mounting

Through Hole

Pin Sayısı

3

Risk Rank

8.14

Number Of Elements

1

Polaritychannel Type

N-CHANNEL

Maximum Gate Source Leakage Current Na

100

Minimum Gate Threshold Voltage V

2

Typical Gate Charge10v Nc

14.6

Minimum Operating Temperature C

-55

Üretici Parça No

MTP1N100E

Eccn Us

EAR99

ECCN Kodu

EAR99

Eu Rohs

Not Compliant

Maximum Positive Gate Source Voltage V

20

Maximum Gate Threshold Voltage V

4

Maximum Power Dissipation Mw

75000

Typical Input Capacitance Vds Pf

587@25V

Typical Gate Threshold Voltage V

3

Svhc

Yes

Drain Currentmax Abs Id

1 A

Hts

8541.29.00.95

Pulsed Drain Currentmax Idm

3 A

Typical Turnon Delay Time Ns

9

Part Life Cycle Code

Obsolete