MTD20N03HDLT4G

Specifications

Package Shape

RECTANGULAR

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Üretici Parça No

MTD20N03HDLT4G

Pin Sayısı

3

Maximum Idss Ua

10

Eccn Us

EAR99

Maximum Gate Source Voltage V

±15

Drainsource On Resistancemax

0.04 Ω

Configuration

Single

Tab

Tab

Package Description

LEAD FREE, CASE 369C-01, DPAK-3

Maximum Drain Source Voltage V

30

Ambalaj

Tape and Reel

Polaritychannel Type

N-CHANNEL

Lead Shape

Gull-wing

Typical Rise Time Ns

212

Drain Currentmax Abs Id

20 A

Transistor Application

SWITCHING

Pulsed Drain Currentmax Idm

60 A

Tepe Reflow Sıcaklığı (°C)

260

JESD-609 Kodu

e3

Case Connection

DRAIN

Risk Rank

5.31

Maximum Continuous Drain Current A

20

Maximum Power Dissipation Mw

74000

Number Of Elements

1

Terminal Formu

GULL WING

Typical Turnoff Delay Time Ns

23

Package Height

2.38(Max)

Additional Feature

AVALANCHE RATED

Minimum Operating Temperature C

-55

Operating Temperaturemax

150 °C

Ds Breakdown Voltagemin

30 V

Number Of Elements Per Chip

1

Operating Mode

ENHANCEMENT MODE

Package Style

SMALL OUTLINE

Category

Power MOSFET

Standard Package Name

TO-252

Svhc

Yes

Typical Gate Charge Vgs Nc

13.4@5V