MTB3N100E

Specifications

Jesd30 Code

R-PSSO-G2

Standard Package Name

TO-263

Typical Gate Charge Vgs Nc

32.5@10V

Package Body Material

PLASTIC/EPOXY

Package Width

4.83(Max)

JESD-609 Kodu

e0

Package Style

SMALL OUTLINE

Case Connection

DRAIN

Maximum Power Dissipation Mw

2500

Typical Gate Charge10v Nc

32.5

Pcb Changed

2

Drain Currentmax Abs Id

3 A

Drain Currentmax Id

3 A

Transistor Element Material

SILICON

Package Shape

RECTANGULAR

Terminal Kaplaması

Tin/Lead (Sn/Pb)

Terminal Formu

GULL WING

Risk Rank

5.81

Typical Fall Time Ns

33

Configuration

Single

Maximum Drain Source Resistance Mohm

4000@10V

Maximum Continuous Drain Current A

3

Svhc

Yes

Package Height

9.65(Max)

Channel Mode

Enhancement

Mounting

Surface Mount

Pin Sayısı

3

Number Of Elements

1

Minimum Operating Temperature C

-55

Maximum Drain Source Voltage V

1000

Material

Si

Svhc Exceeds Threshold

Yes

HTS Kodu

8541.29.00.95

Number Of Elements Per Chip

1

Drainsource On Resistancemax

4 Ω

Package Description

SMALL OUTLINE, R-PSSO-G2

Package Length

10.29(Max)

Channel Type

N

Lead Shape

Gull-wing

Operating Mode

ENHANCEMENT MODE